JPS5513433B2 - - Google Patents
Info
- Publication number
- JPS5513433B2 JPS5513433B2 JP9841874A JP9841874A JPS5513433B2 JP S5513433 B2 JPS5513433 B2 JP S5513433B2 JP 9841874 A JP9841874 A JP 9841874A JP 9841874 A JP9841874 A JP 9841874A JP S5513433 B2 JPS5513433 B2 JP S5513433B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/605—Source, drain, or gate electrodes for FETs comprising highly resistive materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/005—Electric analogue stores, e.g. for storing instantaneous values with non-volatile charge storage, e.g. on floating gate or MNOS
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9841874A JPS5513433B2 (en]) | 1974-08-29 | 1974-08-29 | |
| GB35382/75A GB1518703A (en) | 1974-08-29 | 1975-08-27 | Nonvolatile momory semiconductor device |
| US05/608,676 US4077044A (en) | 1974-08-29 | 1975-08-28 | Nonvolatile memory semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9841874A JPS5513433B2 (en]) | 1974-08-29 | 1974-08-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5126478A JPS5126478A (en]) | 1976-03-04 |
| JPS5513433B2 true JPS5513433B2 (en]) | 1980-04-09 |
Family
ID=14219261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9841874A Expired JPS5513433B2 (en]) | 1974-08-29 | 1974-08-29 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4077044A (en]) |
| JP (1) | JPS5513433B2 (en]) |
| GB (1) | GB1518703A (en]) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5380480A (en) * | 1976-12-27 | 1978-07-15 | Keiwa Shoko Kk | Method for making covering material |
| JPS5910587B2 (ja) * | 1977-08-10 | 1984-03-09 | 株式会社日立製作所 | 半導体装置の保護装置 |
| US4285001A (en) * | 1978-12-26 | 1981-08-18 | Board Of Trustees Of Leland Stanford Jr. University | Monolithic distributed resistor-capacitor device and circuit utilizing polycrystalline semiconductor material |
| GB2070329B (en) * | 1980-01-25 | 1983-10-26 | Tokyo Shibaura Electric Co | Semiconductor memory device |
| US4960648A (en) * | 1988-04-14 | 1990-10-02 | Idemitsu Petrochemical Company Limited | Laminated materials and laminated articles |
| JPH0394479A (ja) * | 1989-06-30 | 1991-04-19 | Hitachi Ltd | 感光性を有する半導体装置 |
| US5317174A (en) * | 1993-02-19 | 1994-05-31 | Texas Instruments Incorporated | Bulk charge modulated device photocell |
| FI953433A7 (fi) * | 1995-07-14 | 1997-01-15 | Nokia Mobile Phones Ltd | Kaksiulotteista hilarakennetta käyttävä kanavatransistori ja sen käyttäminen signaalin prosessointiin |
| TW544752B (en) * | 2002-05-20 | 2003-08-01 | Univ Nat Yunlin Sci & Tech | Method for producing SnO2 gate ion sensitive field effect transistor (ISFET), and method and device for measuring the temperature parameters, drift and hysteresis values thereof |
| US8030637B2 (en) * | 2006-08-25 | 2011-10-04 | Qimonda Ag | Memory element using reversible switching between SP2 and SP3 hybridized carbon |
| US7915603B2 (en) * | 2006-10-27 | 2011-03-29 | Qimonda Ag | Modifiable gate stack memory element |
| US20080102278A1 (en) | 2006-10-27 | 2008-05-01 | Franz Kreupl | Carbon filament memory and method for fabrication |
| US7701746B2 (en) * | 2007-06-28 | 2010-04-20 | Sandisk 3D, Llc | Method of making memory cell with voltage modulated sidewall poly resistor |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3714522A (en) * | 1968-11-14 | 1973-01-30 | Kogyo Gijutsuin Agency Of Ind | Semiconductor device having surface electric-field effect |
| US3906296A (en) * | 1969-08-11 | 1975-09-16 | Nasa | Stored charge transistor |
| US3798508A (en) * | 1969-09-18 | 1974-03-19 | Matsushita Electric Ind Co Ltd | Variable capacitance device |
| US3745426A (en) * | 1970-06-01 | 1973-07-10 | Rca Corp | Insulated gate field-effect transistor with variable gain |
| US3755721A (en) * | 1970-06-15 | 1973-08-28 | Intel Corp | Floating gate solid state storage device and method for charging and discharging same |
| US3657614A (en) * | 1970-06-15 | 1972-04-18 | Westinghouse Electric Corp | Mis array utilizing field induced junctions |
| US3825946A (en) * | 1971-01-15 | 1974-07-23 | Intel Corp | Electrically alterable floating gate device and method for altering same |
| US3728695A (en) * | 1971-10-06 | 1973-04-17 | Intel Corp | Random-access floating gate mos memory array |
| JPS525233B2 (en]) * | 1972-02-29 | 1977-02-10 | ||
| GB1354071A (en) * | 1972-12-05 | 1974-06-05 | Plessey Co Ltd | Memory elements |
| US3916430A (en) * | 1973-03-14 | 1975-10-28 | Rca Corp | System for eliminating substrate bias effect in field effect transistor circuits |
-
1974
- 1974-08-29 JP JP9841874A patent/JPS5513433B2/ja not_active Expired
-
1975
- 1975-08-27 GB GB35382/75A patent/GB1518703A/en not_active Expired
- 1975-08-28 US US05/608,676 patent/US4077044A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US4077044A (en) | 1978-02-28 |
| JPS5126478A (en]) | 1976-03-04 |
| GB1518703A (en) | 1978-07-26 |